Mombamomba ny vokatra
4h-n 4inch 6inch dia100mm sic voa savaivony 1mm hatevin'ny fitomboana ingot
Habe namboarina/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/4H-N SIC ingots/Hadio madio 4H-N 4inch 6inch dia 150mm silicon carbide tokana kristaly (sic) substrates wafersS/ Customzied as-cut sic wafersProduction 4inch Grade 4H-N 1.5mm SIC Wafers ho an'ny kristaly voa
Momba ny Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), fantatra ihany koa amin'ny hoe carborundum, dia semiconductor misy silisiôma sy karbônina misy formula simika SiC.Ny SiC dia ampiasaina amin'ny fitaovana elektronika semiconductor izay miasa amin'ny mari-pana ambony na avo lenta, na izy roa.SiC koa dia iray amin'ireo singa LED manan-danja, dia substrate malaza amin'ny fitomboan'ny fitaovana GaN, ary izy io koa dia toy ny fanaparitahana hafanana amin'ny avo- jiro LED.
Description
| NY FANANANA | 4H-SiC, Kristaly tokana | 6H-SiC, Kristaly tokana |
| Lattice Parameter | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Filaharan'ny stacking | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| hakitroky | 3,21 g/cm3 | 3,21 g/cm3 |
| Therm.Fanitarana Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Fanondroana refraction @750nm | tsy = 2.61 | tsy = 2.60 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Conductivity mafana (karazana N, 0.02 ohm.cm) | a~4,2 W/cm·K@298K |
|
| Conductivity mafana (semi-insulating) | a~4,9 W/cm·K@298K | a~4,6 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Sahan-jiro simba | 3-5×106V/cm | 3-5×106V/cm |
| Velocity Drift Saturation | 2.0×105m/s | 2.0×105m/s |
